供应雪崩二极管APD

雪崩二极管(APD)



新势力光电供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。

PIN Series Special features for Applications 
Series-11 Optimized for 360-560nm Blue enhanced for analytical instruments, readout for scintillators. 
Series-12 Optimized for 500-750nm Flat frequency response up to 3GHz for precise distance meas., communication. 
Series-8 Optimized for 750-820nm High-speed for resistance meas., laser scanner, high speed applications. 
Series-9 Optimized for 750-930nm Low rise time for laser rangefinder, LIDAR, basic technology for arrays. 
Series-10 Optimized for 860-1100nm Sensitivity at 1064nm for range finder, laser tracker, LIDAR. 

Series 11: Blue sensitivity enhanced (for biomedical applications) 
Type No. Active area Dark current Rise time 
Chip Package Size Area M=100 410nm 50Ω 
mm mm2 nA ns 
AD800-11 TO52S1 ?0.8 0.5 1 1 
AD1900-11 TO5i ?1.95 3 5 2 
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz) 
Type No. Active area Spectral Responsivity Cut-off frequency 
Chip Package Size Area 660nm M=100 660nm 50Ω 
mm mm2 A/W GHz 
AD100-12 LCC6.1 ?0.1 0.008 50 typ. 3, min. 2 
AD100-12 LCC6.1f ?0.1 0.008 44 typ. 3, min. 2 
AD100-12 TO52S1 ?0.1 0.008 50 typ. 3, min. 2 
AD230-12 LCC6.1 ?0.23 0.042 50 typ. 3, min. 2 
AD230-12 LCC6.1f ?0.23 0.042 44 typ. 3, min. 2 
AD230-12 TO52S1 ?0.23 0.042 50 typ. 3, min. 2 
AD500-12 LCC6.1 ?0.5 0.196 50 typ. 3, min. 2 
AD500-12 LCC6.1f ?0.5 0.196 44 typ. 3, min. 2 
AD500-12 TO52S1 ?0.5 0.196 50 typ. 3, min. 2 
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds) 
Type No. Active area Dark current Rise time 
Chip Package Size Area M=100 M=100 20V 50Ω 
mm mm2 nA ns 
AD100-8 LCC6.1 ?0.1 0.008 0.05  <0.18 
AD100-8 LCC6.1f ?0.1 0.008 0.05 <0.18 
AD100-8 TO52S1 ?0.1 0.008 0.05 <0.18 
AD100-8 TO52S3 ?0.1 0.008 0.05 80% at 760-910nm with NTC 
16AA0.13-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm with NTC 
16AA0.13-9 DIL18 APD Array 16 Elements, QE>80% at 760-910nm 
16AA0.4-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm 
25AA0.04-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 
25AA0.16-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 
64AA0.04-9 BGA APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC 
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources) 
Type No. Active area Dark current Rise time 
Chip Package Size Area M=100 M=100 1064nm 50Ω 
mm mm2 nA ns 
AD500-10 TO5i ?0.5 0.2 1.5 4 
AD800-10 TO5i ?0.8 0.5 3 5 
AD1500-10 TO5i ?1.5 1.77 7 5 
AD4000-10 TO8Si ?4 12.56 50 6 
AD800-10 TO8Si High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA) 
Multi-Element Array 
QA4000-10 TO8Si Quadrant Avalanche Photodiode, High QE at 850-1070nm 

updated:2012.07.28

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