雪崩二极管(APD) 新势力光电供应雪崩二极管(APD),是一种内部增益机制的光电二极管。根据具体应用,可以选择:蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于:安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。 PIN Series Special features for Applications Series-11 Optimized for 360-560nm Blue enhanced for analytical instruments, readout for scintillators. Series-12 Optimized for 500-750nm Flat frequency response up to 3GHz for precise distance meas., communication. Series-8 Optimized for 750-820nm High-speed for resistance meas., laser scanner, high speed applications. Series-9 Optimized for 750-930nm Low rise time for laser rangefinder, LIDAR, basic technology for arrays. Series-10 Optimized for 860-1100nm Sensitivity at 1064nm for range finder, laser tracker, LIDAR. Series 11: Blue sensitivity enhanced (for biomedical applications) Type No. Active area Dark current Rise time Chip Package Size Area M=100 410nm 50Ω mm mm2 nA ns AD800-11 TO52S1 ?0.8 0.5 1 1 AD1900-11 TO5i ?1.95 3 5 2 Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz) Type No. Active area Spectral Responsivity Cut-off frequency Chip Package Size Area 660nm M=100 660nm 50Ω mm mm2 A/W GHz AD100-12 LCC6.1 ?0.1 0.008 50 typ. 3, min. 2 AD100-12 LCC6.1f ?0.1 0.008 44 typ. 3, min. 2 AD100-12 TO52S1 ?0.1 0.008 50 typ. 3, min. 2 AD230-12 LCC6.1 ?0.23 0.042 50 typ. 3, min. 2 AD230-12 LCC6.1f ?0.23 0.042 44 typ. 3, min. 2 AD230-12 TO52S1 ?0.23 0.042 50 typ. 3, min. 2 AD500-12 LCC6.1 ?0.5 0.196 50 typ. 3, min. 2 AD500-12 LCC6.1f ?0.5 0.196 44 typ. 3, min. 2 AD500-12 TO52S1 ?0.5 0.196 50 typ. 3, min. 2 Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds) Type No. Active area Dark current Rise time Chip Package Size Area M=100 M=100 20V 50Ω mm mm2 nA ns AD100-8 LCC6.1 ?0.1 0.008 0.05 <0.18 AD100-8 LCC6.1f ?0.1 0.008 0.05 <0.18 AD100-8 TO52S1 ?0.1 0.008 0.05 <0.18 AD100-8 TO52S3 ?0.1 0.008 0.05 80% at 760-910nm with NTC 16AA0.13-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm with NTC 16AA0.13-9 DIL18 APD Array 16 Elements, QE>80% at 760-910nm 16AA0.4-9 SOJ22GL APD Array 16 Elements, QE>80% at 760-910nm 25AA0.04-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 25AA0.16-9 BGA APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC 64AA0.04-9 BGA APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources) Type No. Active area Dark current Rise time Chip Package Size Area M=100 M=100 1064nm 50Ω mm mm2 nA ns AD500-10 TO5i ?0.5 0.2 1.5 4 AD800-10 TO5i ?0.8 0.5 3 5 AD1500-10 TO5i ?1.5 1.77 7 5 AD4000-10 TO8Si ?4 12.56 50 6 AD800-10 TO8Si High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA) Multi-Element Array QA4000-10 TO8Si Quadrant Avalanche Photodiode, High QE at 850-1070nm updated:2012.07.28 相关商品 光电二极管(PIN) 铟镓砷探测器(InGaAs) 光电管放大器 光电管接收模块